Paper Title:
Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1227-1232
DOI
10.4028/www.scientific.net/MSF.38-41.1227
Citation
Y. Yajima, N. Natsuaki, S. Nishimatsu, "Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR", Materials Science Forum, Vols. 38-41, pp. 1227-1232, 1989
Online since
January 1991
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