Paper Title:
Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
  Abstract

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Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1265-1270
DOI
10.4028/www.scientific.net/MSF.38-41.1265
Citation
T. Sugiyama, Y. Ishikawa, K. Tanimura, Y. Hayashi, N. Itoh, "Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy", Materials Science Forum, Vols. 38-41, pp. 1265-1270, 1989
Online since
January 1991
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