Paper Title:
Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1283-1288
DOI
10.4028/www.scientific.net/MSF.38-41.1283
Citation
K. Sakai, T. Ogawa, "Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy", Materials Science Forum, Vols. 38-41, pp. 1283-1288, 1989
Online since
January 1991
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