Paper Title:
Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1313-1318
DOI
10.4028/www.scientific.net/MSF.38-41.1313
Citation
E.K. Pal, E. Hild, T. Kormàny, S. Nouredin, "Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography", Materials Science Forum, Vols. 38-41, pp. 1313-1318, 1989
Online since
January 1991
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