Paper Title:
Defect Analysis in SiO2/Si Structures by Electron Tunneling
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1331-1336
DOI
10.4028/www.scientific.net/MSF.38-41.1331
Citation
H. Köster, M. Schmid, "Defect Analysis in SiO2/Si Structures by Electron Tunneling", Materials Science Forum, Vols. 38-41, pp. 1331-1336, 1989
Online since
January 1991
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Price
$32.00
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