Paper Title:
Two-Electron Capture in Semiconductors with Deep Defects
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
1361-1366
DOI
10.4028/www.scientific.net/MSF.38-41.1361
Citation
N. T. Bagraev, N.M. Kolchanova, V.A. Mashkov, I. S. Polovtsev, "Two-Electron Capture in Semiconductors with Deep Defects", Materials Science Forum, Vols. 38-41, pp. 1361-1366, 1989
Online since
January 1991
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Price
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