Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers |
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| Journal | Materials Science Forum (Volumes 38 - 41) |
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| Volume | Defects in Semiconductors 15 |
| Edited by | G. Ferenczi |
| Pages | 1487-0 |
| DOI | 10.4028/www.scientific.net/MSF.38-41.1487 |
| Citation | M. Füstöss-Wegner et al., 1991, Materials Science Forum, 38-41, 1487 |
| Authors | M. Füstöss-Wegner, L. Pogány, Margit Koós, László S. Tóth, G. Zentai |
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