Paper Title:
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
177-182
DOI
10.4028/www.scientific.net/MSF.38-41.177
Citation
M. W. Hüppi, "The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing", Materials Science Forum, Vols. 38-41, pp. 177-182, 1989
Online since
January 1991
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