Paper Title:
Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
195-200
DOI
10.4028/www.scientific.net/MSF.38-41.195
Citation
E. Hild, S. Nouredin, T. Kormàny, "Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy", Materials Science Forum, Vols. 38-41, pp. 195-200, 1989
Online since
January 1991
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