Paper Title:
Defects in High-Dose Oxygen Implanted Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
207-212
DOI
10.4028/www.scientific.net/MSF.38-41.207
Citation
A. De Veirman, K. Yallup, J. Van Landuyt, H.E. Maes, "Defects in High-Dose Oxygen Implanted Silicon", Materials Science Forum, Vols. 38-41, pp. 207-212, 1989
Online since
January 1991
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