Paper Title:
Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
445-450
DOI
10.4028/www.scientific.net/MSF.38-41.445
Citation
P. Omling, P. Emanuelsson, H. G. Grimmeiss, "Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon", Materials Science Forum, Vols. 38-41, pp. 445-450, 1989
Online since
January 1991
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Price
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