Paper Title:
Physical Behaviour of 4d Transition Metal Impurity in Silicon
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
457-462
DOI
10.4028/www.scientific.net/MSF.38-41.457
Citation
J. Zhou, X. J. Ji, S. Y. Li, W. Jian, J. L. Gao, Z. Y. Han, "Physical Behaviour of 4d Transition Metal Impurity in Silicon", Materials Science Forum, Vols. 38-41, pp. 457-462, 1989
Online since
January 1991
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Price
$32.00
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