Paper Title:
Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities
  Abstract

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Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
531-536
DOI
10.4028/www.scientific.net/MSF.38-41.531
Citation
S. Shimomura, H. Takahashi, S. Takaoka, K. Murase, "Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities", Materials Science Forum, Vols. 38-41, pp. 531-536, 1989
Online since
January 1991
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