Paper Title:
Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
631-636
DOI
10.4028/www.scientific.net/MSF.38-41.631
Citation
A. Dörnen, R. Sauer, G. Pensl, "Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements", Materials Science Forum, Vols. 38-41, pp. 631-636, 1989
Online since
January 1991
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Price
$32.00
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