Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2 |
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| Journal | Materials Science Forum (Volumes 38 - 41) |
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| Volume | Defects in Semiconductors 15 |
| Edited by | G. Ferenczi |
| Pages | 67-72 |
| DOI | 10.4028/www.scientific.net/MSF.38-41.67 |
| Citation | Toshiyuki Ikoma et al., 1991, Materials Science Forum, 38-41, 67 |
| Authors | Toshiyuki Ikoma, Yukito Hagihara |
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