Paper Title:
Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
67-72
DOI
10.4028/www.scientific.net/MSF.38-41.67
Citation
T. Ikoma, Y. Hagihara, "Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2", Materials Science Forum, Vols. 38-41, pp. 67-72, 1989
Online since
January 1991
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