Paper Title:
Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
779-784
DOI
10.4028/www.scientific.net/MSF.38-41.779
Citation
A.A. Gippius, V.V. Chernyaev, N.Y. Ponomarev, V.V. Ushakov, "Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors", Materials Science Forum, Vols. 38-41, pp. 779-784, 1989
Online since
January 1991
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