The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs |
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| Journal | Materials Science Forum (Volumes 38 - 41) |
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| Volume | Defects in Semiconductors 15 |
| Edited by | G. Ferenczi |
| Pages | 79-84 |
| DOI | 10.4028/www.scientific.net/MSF.38-41.79 |
| Citation | P. Omling et al., 1991, Materials Science Forum, 38-41, 79 |
| Authors | P. Omling, P. Silverberg, L. Samuelson |
| Full Paper | 
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