The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs
| Periodical | Materials Science Forum (Volumes 38 - 41) |
|---|---|
| Main Theme | Defects in Semiconductors 15 |
| Edited by | G. Ferenczi |
| Pages | 79-84 |
| DOI | 10.4028/www.scientific.net/MSF.38-41.79 |
| Citation | P. Omling et al., 1991, Materials Science Forum, 38-41, 79 |
| Authors | P. Omling, P. Silverberg, L. Samuelson |
| Price | US$ 28,- |