Paper Title:
Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 38-41)
Edited by
G. Ferenczi
Pages
929-934
DOI
10.4028/www.scientific.net/MSF.38-41.929
Citation
Y. Nakamura, Y.H. Ohtsuki, T. Kikuta, "Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs", Materials Science Forum, Vols. 38-41, pp. 929-934, 1989
Online since
January 1991
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