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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

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• p213 Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon   [ 281 K ]
  Authors: E. Susi, Antonella Poggi, R. Fabbri, Giorgio Lulli, A.G. Adegboyega
• p219 Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon   [ 298 K ]
  Authors: Kenshiro Nakashima
• p225 Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon   [ 173 K ]
  Authors: Werner Puff, Peter Mascher, D. Kerr, S. Dannefaer
• p231 Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing   [ 207 K ]
  Authors: V. Smid, Jan Zeman, J. Kristofik, J.J. Mares, Yu.V. Vyzhigin, V.A. Kostylev, N.A. Sobolev, V.V. Eliseev, V.M. Likunova
• p237 Impact of Volume Defects on Gold Gettering in Cz-Si Wafers   [ 356 K ]
  Authors: F.G. Kirscht, K. Schmalz, I. Babanskaya
• p243 Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation   [ 263 K ]
  Authors: F. Cembali, R. Fabbri, P. Negrini, Marco Servidori, A. Zani
• p249 Defects in Amorphous Silicon   [ 526 K ]
  Authors: Sokrates T. Pantelides
• p257 Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties   [ 300 K ]
  Authors: Franz Beeler, Matthias Scheffler
• p263 Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon   [ 204 K ]
  Authors: J.R. Leite, E.C.F. da Silva, A. Dal Pino
• p269 Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon   [ 311 K ]
  Authors: P.J. Kelly
• p275 Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level   [ 245 K ]
  Authors: Jerzy M. Langer, Christian Delerue, Michel Lannoo
• p281 One- and Two-Oxygen Defects in Silicon - A Theoretical Study   [ 230 K ]
  Authors: Peter Deák, L.C. Snyder, James W. Corbett, R.Z. Wu, A. Sólyom
• p287 Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs   [ 277 K ]
  Authors: Atsushi Oshiyama
• p293 Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon   [ 238 K ]
  Authors: Harald Overhof, Matthias Scheffler, C.M. Weinert
• p299 Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes   [ 198 K ]
  Authors: D. Weider, Matthias Scheffler, Udo Scherz