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Injection Lasers Based on Intraband Carrier Transitions

Journal Materials Science Forum (Volumes 384 - 385)
Volume Ultrafast Phenomena in Semiconductors 2001
Edited by S. Asmontas, A. Dargys and H.G. Roskos
Pages 209-212
DOI 10.4028/www.scientific.net/MSF.384-385.209
Citation E. Towe et al., 2002, Materials Science Forum, 384-385, 209
Authors E. Towe, D. Pal, L.E. Vorobjev, A.V. Glukhovskoy, S.N. Danilov, V.L. Zerova, V.Yu. Panevin, D.A. Firsov, V.A. Shalygin, G.G. Zegrya, A. Weber, M. Grundmann
Keywords Auger Recombination, Intersubband Transitions, Laser, Mid-Infrared, Quantum Well
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