Paper Title:
Quantum and Random Impurity Effects in Ultra-Short MOSFET
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 384-385)
Edited by
S. Asmontas, A. Dargys and H.G. Roskos
Pages
51-58
DOI
10.4028/www.scientific.net/MSF.384-385.51
Citation
P. Dollfus, S. Barraud, E. Cassan, F. Monsef, S. Galdin, "Quantum and Random Impurity Effects in Ultra-Short MOSFET", Materials Science Forum, Vols. 384-385, pp. 51-58, 2002
Online since
January 2002
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Price
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