Quantum and Random Impurity Effects in Ultra-Short MOSFET |
| Journal |
Materials Science Forum (Volumes 384 - 385) |
| Volume |
Ultrafast Phenomena in Semiconductors 2001 |
| Edited by |
S. Asmontas, A. Dargys and H.G. Roskos |
| Pages |
51-58 |
| DOI |
10.4028/www.scientific.net/MSF.384-385.51 |
| Citation |
P. Dollfus et al., 2002, Materials Science Forum, 384-385, 51 |
| Authors |
P. Dollfus, S. Barraud, E. Cassan, F. Monsef, S. Galdin |
| Keywords |
Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Quantum Effects, Random Impurity, Tunneling |
| Full Paper |
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