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Silicon Carbide and Related Materials 2001

Materials Science Forum Volumes 389 - 393

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• p4 Overview   [ 73 K ]
• p3 Silicon Carbide Technology in New Era   [ 312 K ]
  Authors: Hiroyuki Matsunami
• p9 Characterisation and Defects in Silicon Carbide   [ 526 K ]
  Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén
• p15 Opportunities and Technical Strategies for Silicon Carbide Device Development   [ 367 K ]
  Authors: James A. Cooper
• p23 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production   [ 305 K ]
  Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John J. Palmour, Calvin H. Carter Jr.
• p29 Growth and Defect Reduction of Bulk SiC Crystals   [ 403 K ]
  Authors: Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro
• p35 Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport   [ 268 K ]
  Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman
• p39 Lateral Enlargement of Silicon Carbide Crystals   [ 310 K ]
  Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén
• p43 Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth   [ 322 K ]
  Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai
• p47 4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots   [ 248 K ]
  Authors: Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro
• p51 The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity   [ 200 K ]
  Authors: Youichi Miyanagi, Koji Nakayama, Hiromu Shiomi, Shigehiro Nishino
• p55 Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC   [ 211 K ]
  Authors: Masakazu Katsuno, Noboru Ohtani, Tatsuo Fujimoto, Takashi Aigo, Hirokatsu Yashiro
• p59 Reduction of Macrodefects in Bulk SiC Single Crystals   [ 311 K ]
  Authors: Cengiz M. Balkas, Andrei A. Maltsev, Matthew D. Roth, V.D. Heydemann, Mrityunjay Sharma, Nikolay K. Yushin
• p63 Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals   [ 224 K ]
  Authors: Jürgen Wollweber, H. J. Rost, D. Schulz, D. Siche
• p67 Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes   [ 257 K ]
  Authors: H. J. Rost, J. Doerschel, D. Schulz, D. Siche, Jürgen Wollweber