Main Theme:

Silicon Carbide and Related Materials 2001

Volumes 389 - 393
doi: 10.4028/www.scientific.net/MSF.389-393
Paper Titles published in this Main Theme:
Paper Title Page

Overview

4

Silicon Carbide Technology in New Era

Authors: Hiroyuki Matsunami

3

Characterisation and Defects in Silicon Carbide

Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén

9

Opportunities and Technical Strategies for Silicon Carbide Device Development

Authors: James A. Cooper

15

High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production

Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr.

23

Growth and Defect Reduction of Bulk SiC Crystals

Authors: Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro

29

Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman

35

Lateral Enlargement of Silicon Carbide Crystals

Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén

39

Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai

43

4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots

Authors: Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro

47

Showing 1 to 10 of 372 Paper Titles