Silicon Carbide and Related Materials 2001
| Paper Title | Page |
|---|---|
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4 |
|
Silicon Carbide Technology in New Era Authors: Hiroyuki Matsunami |
3 |
|
Characterisation and Defects in Silicon Carbide Authors: Peder Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, Björn Magnusson, S.G. Sridhara, G.R. Pozina, H. Lendenmann, Erik Janzén |
9 |
|
Opportunities and Technical Strategies for Silicon Carbide Device Development Authors: James A. Cooper |
15 |
|
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Authors: Stephan G. Müller, M.F. Brady, W.H. Brixius, G. Fechko, R.C. Glass, D. Henshall, H. McD. Hobgood, Jason R. Jenny, R.T. Leonard, D.P. Malta, Adrian R. Powell, Valeri F. Tsvetkov, S.T. Allen, John W. Palmour, Calvin H. Carter Jr. |
23 |
|
Growth and Defect Reduction of Bulk SiC Crystals Authors: Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Hirokatsu Yashiro |
29 |
|
Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport Authors: Shao Ping Wang, Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Cengiz M. Balkas, A.G. Timmerman |
35 |
|
Lateral Enlargement of Silicon Carbide Crystals Authors: Henrik Jacobsson, Rositza Yakimova, P. Råback, Mikael Syväjärvi, Jens Birch, Erik Janzén |
39 |
|
Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth Authors: Shinichi Nishizawa, Tomohisa Kato, Yasuo Kitou, Naoki Oyanagi, Kazuo Arai |
43 |
|
4H Polytype Grain Formation in PVT-Grown 6H-SiC Ingots Authors: Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro |
47 |
