Paper Title:
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1001-1004
DOI
10.4028/www.scientific.net/MSF.389-393.1001
Citation
H.Ö. Ólafsson, E. Ö. Sveinbjörnsson, T.E. Rudenko, V.I. Kilchytska, I.P. Tyagulski, I.N. Osiyuk, "New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures", Materials Science Forum, Vols. 389-393, pp. 1001-1004, 2002
Online since
April 2002
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Price
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