Paper Title:
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1009-1012
DOI
10.4028/www.scientific.net/MSF.389-393.1009
Citation
M. Yoshikawa, M. Satoh, T. Ohshima, H. Itoh, "Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures", Materials Science Forum, Vols. 389-393, pp. 1009-1012, 2002
Online since
April 2002
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