The Investigation of 4H-SiC/SiO2 Interfaces by Optical and Electrical Measurements |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1013-1016 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1013 |
| Citation |
Yuuki Ishida et al., 2002, Materials Science Forum, 389-393, 1013 |
| Authors |
Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Tamotsu Jikimoto, Hidekazu Tsuchida, Masahito Yoshikawa, Yuichi Tomioka, M. Midorikawa, Yasuto Hijikata, Sadafumi Yoshida |
| Keywords |
C-V, FTIR, Interface Layer, MOS, Spectroscopic Ellipsometry (SE) |
| Full Paper |
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