Paper Title:
Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1041-1044
DOI
10.4028/www.scientific.net/MSF.389-393.1041
Citation
K. Chatty, S. Banerjee, T. P. Chow, R. J. Gutmann, E. Arnold, D. Alok, "Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1041-1044, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.