Paper Title:
Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1045-1048
DOI
10.4028/www.scientific.net/MSF.389-393.1045
Citation
S. Suzuki, S. Harada, R. Kosugi, J. Senzaki, K. Fukuda, "Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1045-1048, 2002
Online since
April 2002
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