Paper Title:
Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1049-1052
DOI
10.4028/www.scientific.net/MSF.389-393.1049
Citation
R. Kosugi, M. Okamoto, S. Suzuki, J. Senzaki, S. Harada, K. Fukuda, K. Arai, "Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1049-1052, 2002
Online since
April 2002
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