Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Ishida, Yuuki; Takahashi, Tetsuo; Yoshida, Sadafumi; Kushibe, Mitsuhiro; Masahara, Koh; Tanaka, Tomoyuki; Suzuki, Seiji; Kojima, Kazutoshi; Suzuki, Takaya; Senzaki, Junji; Harada, Shinsuke; Ohno, Toshiyuki; Fukuda, Kenji; Arai, Kazuo

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Periodical	Materials Science Forum (Volumes 389 - 393)
Main Theme	Silicon Carbide and Related Materials 2001
Edited by	S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages	1053-1056
DOI	10.4028/www.scientific.net/MSF.389-393.1053
Citation	Kazutoshi Kojima et al., 2002, Materials Science Forum, 389-393, 1053
Authors	Kazutoshi Kojima, Toshiyuki Ohno, Seiji Suzuki, Junji Senzaki, Shinsuke Harada, Kenji Fukuda, Mitsuhiro Kushibe, Koh Masahara, Yuuki Ishida, Sadafumi Yoshida, Tetsuo Takahashi, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai
Keywords	4H-SiC, Crystal Quality, Epitaxial Layer, Inversion Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
Price	US$ 28,-

Paper Titles

Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs