Paper Title:
Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1053-1056
DOI
10.4028/www.scientific.net/MSF.389-393.1053
Citation
K. Kojima, T. Ohno, S. Suzuki, J. Senzaki, S. Harada, K. Fukuda, M. Kushibe, K. Masahara, Y. Ishida, S. Yoshida, T. Takahashi, T. Suzuki, T. Tanaka, K. Arai, "Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1053-1056, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.