Paper Title:
A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing
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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1057-1060
DOI
10.4028/www.scientific.net/MSF.389-393.1057
Citation
K. Fukuda, J. Senzaki, M. Kushibe, K. Kojima, R. Kosugi, S. Suzuki, S. Harada, T. Suzuki, T. Tanaka, K. Arai, "A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing", Materials Science Forum, Vols. 389-393, pp. 1057-1060, 2002
Online since
April 2002
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