Paper Title:
Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1061-1064
DOI
10.4028/www.scientific.net/MSF.389-393.1061
Citation
J. Senzaki, K. Fukuda, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki, K. Arai, "Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing", Materials Science Forum, Vols. 389-393, pp. 1061-1064, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.