4H-SiC MOSFETs on (03-38) Face |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1065-1068 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1065 |
| Citation |
T. Hirao et al., 2002, Materials Science Forum, 389-393, 1065 |
| Authors |
T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi |
| Keywords |
4H-SiC (03-38) Plane, Channel Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS |
| Full Paper |
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