Paper Title:

4H-SiC MOSFETs on (03-38) Face

Periodical Materials Science Forum (Volumes 389 - 393)
Main Theme Silicon Carbide and Related Materials 2001
Edited by S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages 1065-1068
DOI 10.4028/www.scientific.net/MSF.389-393.1065
Citation T. Hirao et al., 2002, Materials Science Forum, 389-393, 1065
Authors T. Hirao, Hiroshi Yano, Tsunenobu Kimoto, Hiroyuki Matsunami, Hiromu Shiomi
Keywords 4H-SiC (03-38) Plane, Channel Mobility, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MOS
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