Paper Title:
Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1069-1072
DOI
10.4028/www.scientific.net/MSF.389-393.1069
Citation
S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda, K. Arai, "Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure", Materials Science Forum, Vols. 389-393, pp. 1069-1072, 2002
Online since
April 2002
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