Paper Title:
4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1073-1076
DOI
10.4028/www.scientific.net/MSF.389-393.1073
Citation
S. Kaneko, H. Tanaka, Y. Shimoida, N. Kiritani, S. Tanimoto, M. Yamanaka, M. Hoshi, "4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide", Materials Science Forum, Vols. 389-393, pp. 1073-1076, 2002
Online since
April 2002
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Price
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