4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1073-1076 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1073 |
| Citation |
Saichirou Kaneko et al., 2002, Materials Science Forum, 389-393, 1073 |
| Authors |
Saichirou Kaneko, Hideaki Tanaka, Yoshio Shimoida, Norihiko Kiritani, Satoshi Tanimoto, Mitsugu Yamanaka, Masakatsu Hoshi |
| Keywords |
ACCUFET, Field Effect Mobility, Interface States (or Traps), Stacked Gate Oxide |
| Full Paper |
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