Paper Title:
4H-SiC Delta-Doped Accumulation-Channel MOS FET
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1077-1080
DOI
10.4028/www.scientific.net/MSF.389-393.1077
Citation
T. Yokogawa, K. Takahashi, O. Kusumoto, M. Uchida, K. Yamashita, M. Kitabatake, "4H-SiC Delta-Doped Accumulation-Channel MOS FET", Materials Science Forum, Vols. 389-393, pp. 1077-1080, 2002
Online since
April 2002
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Price
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