Paper Title:
Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1081-1084
DOI
10.4028/www.scientific.net/MSF.389-393.1081
Citation
T. Hatakeyama, S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Fukuda, T. Shinohe, K. Arai, "Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface", Materials Science Forum, Vols. 389-393, pp. 1081-1084, 2002
Online since
April 2002
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Price
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