Paper Title:
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1085-1088
DOI
10.4028/www.scientific.net/MSF.389-393.1085
Citation
K. Adachi, C. M. Johnson, K. Arai, K. Fukuda, S. Harada, T. Shinohe, "TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate", Materials Science Forum, Vols. 389-393, pp. 1085-1088, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.