Paper Title:
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1097-1100
DOI
10.4028/www.scientific.net/MSF.389-393.1097
Citation
K. K. Lee, T. Ohshima, H. Itoh, "Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions", Materials Science Forum, Vols. 389-393, pp. 1097-1100, 2002
Online since
April 2002
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Price
$32.00
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