Paper Title:
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
111-114
DOI
10.4028/www.scientific.net/MSF.389-393.111
Citation
T. Kato, N. Oyanagi, Y. Kitou, S. I. Nishizawa, K. Arai, "Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth", Materials Science Forum, Vols. 389-393, pp. 111-114, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.