Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
111-114 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.111 |
| Citation |
Tomohisa Kato et al., 2002, Materials Science Forum, 389-393, 111 |
| Authors |
Tomohisa Kato, Naoki Oyanagi, Yasuo Kitou, Shinichi Nishizawa, Kazuo Arai |
| Keywords |
Defect, Modified Lely Method, Silicon Carbide (SiC), Sublimation |
| Full Paper |
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