Paper Title:
Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1141-1144
DOI
10.4028/www.scientific.net/MSF.389-393.1141
Citation
T. Tsuji, S. Izumi, A. Ueda, H. Fujisawa, K. Ueno, H. Tsuchida, I. Kamata, T. Jikimoto, K. Izumi, "Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements", Materials Science Forum, Vols. 389-393, pp. 1141-1144, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.