Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1141-1144 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1141 |
| Citation |
Takashi Tsuji et al., 2002, Materials Science Forum, 389-393, 1141 |
| Authors |
Takashi Tsuji, Syunsuke Izumi, A. Ueda, Hiroyuki Fujisawa, Katsunori Ueno, Hidekazu Tsuchida, Isaho Kamata, Tamotsu Jikimoto, Kunikaza Izumi |
| Keywords |
Annealing Temperature, Leakage Current, OBIC, TEM |
| Full Paper |
Get the full paper by clicking here
|
