Paper Title:
4H-SiC Schottky Diodes with High On/Off Current Ratio
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1145-1148
DOI
10.4028/www.scientific.net/MSF.389-393.1145
Citation
K. Vassilevski, A. B. Horsfall, C. M. Johnson, N. G. Wright, A. G. O'Neill, "4H-SiC Schottky Diodes with High On/Off Current Ratio", Materials Science Forum, Vols. 389-393, pp. 1145-1148, 2002
Online since
April 2002
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Price
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