Paper Title:
4H-SiC Schottky Diodes with High On/Off Current Ratio
| Periodical | Materials Science Forum (Volumes 389 - 393) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2001 |
| Edited by | S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages | 1145-1148 |
| DOI | 10.4028/www.scientific.net/MSF.389-393.1145 |
| Citation | Konstantin Vassilevski et al., 2002, Materials Science Forum, 389-393, 1145 |
| Authors | Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill |
| Keywords | 4H-SiC, Nickel Ni, Schottky Barrier, Titanium (Ti) |
| Price | US$ 28,- |
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