Paper Title:
Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1149-1152
DOI
10.4028/www.scientific.net/MSF.389-393.1149
Citation
A. B. Horsfall, K. Vassilevski, C. M. Johnson, N. G. Wright, A. G. O'Neill, R. Gwilliam, "Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 389-393, pp. 1149-1152, 2002
Online since
April 2002
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.