The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
115-118 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.115 |
| Citation |
Taro Nishiguchi et al., 2002, Materials Science Forum, 389-393, 115 |
| Authors |
Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino |
| Keywords |
(11-20) Plane, C/Si Ratio, CVD Growth, Nitrogen, Sublimation Growth, Tantalum |
| Full Paper |
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