Paper Title:
The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
115-118
DOI
10.4028/www.scientific.net/MSF.389-393.115
Citation
T. Nishiguchi, Y. Masuda, S. Ohshima, S. Nishino, "The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates", Materials Science Forum, Vols. 389-393, pp. 115-118, 2002
Online since
April 2002
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Price
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