Paper Title:
Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1153-1156
DOI
10.4028/www.scientific.net/MSF.389-393.1153
Citation
H. P. Felsl, G. Wachutka, "Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse Bias", Materials Science Forum, Vols. 389-393, pp. 1153-1156, 2002
Online since
April 2002
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