Paper Title:
Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1161-1164
DOI
10.4028/www.scientific.net/MSF.389-393.1161
Citation
F. Templier, P. Ferret, L. Di Cioccio, E. Collard, A. Lhorte, T. Billon, "Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination", Materials Science Forum, Vols. 389-393, pp. 1161-1164, 2002
Online since
April 2002
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