Paper Title:
Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
  Abstract

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Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1165-1168
DOI
10.4028/www.scientific.net/MSF.389-393.1165
Citation
K. Ohtsuka, H. Sugimoto, S. I. Kinouchi, Y. Tarui, M. Imaizumi, T. Takami, T. Ozeki, "Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode", Materials Science Forum, Vols. 389-393, pp. 1165-1168, 2002
Online since
April 2002
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Price
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