Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
1165-1168 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.1165 |
| Citation |
Kenichi Ohtsuka et al., 2002, Materials Science Forum, 389-393, 1165 |
| Authors |
Kenichi Ohtsuka, Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Tetsuya Takami, Tatsuo Ozeki |
| Keywords |
Breakdown Voltage, Electrode Edge, Pinning, Schottky, Trap |
| Full Paper |
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