Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates |
| Journal |
Materials Science Forum (Volumes 389 - 393) |
| Volume |
Silicon Carbide and Related Materials 2001 |
| Edited by |
S. Yoshida, S. Nishino, H. Harima and T. Kimoto |
| Pages |
119-122 |
| DOI |
10.4028/www.scientific.net/MSF.389-393.119 |
| Citation |
Taro Nishiguchi et al., 2002, Materials Science Forum, 389-393, 119 |
| Authors |
Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro Nishino |
| Keywords |
(11-20) Plane, Growth Model, Growth Temperature, Sublimation Growth, Two-Step Growth |
| Full Paper |
Get the full paper by clicking here
|
