Paper Title:
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1199-1202
DOI
10.4028/www.scientific.net/MSF.389-393.1199
Citation
Y. Sugawara, K. Asano, D. Takayama, S. H. Ryu, R. Singh, J. W. Palmour, T. Hayashi, "5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Ω cm2", Materials Science Forum, Vols. 389-393, pp. 1199-1202, 2002
Online since
April 2002
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Price
$32.00
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