Paper Title:
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1203-1206
DOI
10.4028/www.scientific.net/MSF.389-393.1203
Citation
M. Imaizumi, Y. Tarui, H. Sugimoto, K. Ohtsuka, T. Takami, T. Ozeki, "Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1203-1206, 2002
Online since
April 2002
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Price
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