Paper Title:
Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 389-393)
Edited by
S. Yoshida, S. Nishino, H. Harima and T. Kimoto
Pages
1207-1210
DOI
10.4028/www.scientific.net/MSF.389-393.1207
Citation
Y. Shimoida, S. Kaneko, H. Tanaka, M. Hoshi, "Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETs", Materials Science Forum, Vols. 389-393, pp. 1207-1210, 2002
Online since
April 2002
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